0405SC-2200M Datasheet PDF

Microsemi 0405SC-2200M

The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to the series of High Power Silicon Carbide Transistors from Microsemi RF IS.

Part No.	0405SC-2200M
Datasheet	0405SC-2200M Download
Manufacturer	Microsemi
Description	Class AB 406 to 450 MHz Silicon Carbide SIT
Buy	Stock & Price

GENERAL DESCRIPTION

CASE OUTLINE 55TW-FET (Common Gate)

ABSOLUTE MAXIMUM RATINGS

Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 250V -1V -65 to +150°C +250°C

ELECTRICAL CHARACTERISTICS

@ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Idss Drain-Source Leakage Current VGS = -20V, VDG= 125V Igss Gate-Source Leakage Current VGS = -20V, VDS = 0V θJC1 Thermal Resistance 750 µA 50 µA 0.15 ºC/W FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 120 mA, Freq = 406, 425, 450 MHz, GPG Common Gate Power Gain Pout = 2200 W, Pulsed 7.0 7.5 dB Pin Input Power Pulse Width = 300us, DF = 6% 390 440 W ηd Drain Efficiency F = 450 MHz, Pout =2200W 50 55 % ψ Load Mismatch F = 420 MHz, Pout = 2200W 10:1 Po +1dB Power Output – Higher Drive F = 450 MHz, Pin = 490 W 2450 W Vgs Gate source Voltage Set for Idq(ave) = 120mA 3.0 10.0 Volts Rev A1 May 2010 Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein.