0510GN-25-CP Datasheet | Microsemi

DESCRIPTION The 0510GN-25-CP is a MON SOURCE, class-AB, Ga N on Si C HEMT transistor amplifier for 50MHz-1GHz broadband pulsed and CW RF power applications. The transistor is housed in a Ceramic SMT package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness. FEATURES : - Wide-band 50MHz-1GHz general purpose driver applications - Single lumped-element Broadband application circuit - Ideal for Pulsed Radar, Avionics, ISM, and CW munication - mercial & Military Applications - 25 W Pulsed/CW Psat, 16 d B Power Gain and 50 % Drain Efficiency - Low-cost Ceramic SMT package with excellent RF & Thermal performance, reliability & ruggedness - 50V Bias Operation with high breakdown voltage PACKAGE OUTLINE Ceramic SMT 160X200 MIL ABSOLUTE MAXIMUM RATINGS Maximum CW Power Dissipation Device Dissipation @ 25C 25 W Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) Supply Current ( IDD...