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1011GN-125E - Earless Driver GaN Transistor

Key Features

  • 1030-1090MHz.
  • 125W Pulsed Output Power.
  • 128µs-1mS, 10% Pulsing.
  • Common Source.
  • Class AB.
  • 50VDD Bias Voltage.
  • >70% Efficiency Across the Frequency Band.
  • Extremely Compact Size.
  • 18.7 dB Typical Power Gain.
  • 0.1 dB Typical Excellent Gain Flatness.
  • IFF, Mode-S, TCAS Avionics Secondary Radars.
  • All gold metallization and eutectic die attach for highest reliability.
  • 50Ω in/out lumped element very small footprint plug & pla.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1011GN-125E/EL/EP 125 Watts • 50 Volts • 128us, 10% 1030-1090MHz E Class Earless Driver GaN Transistor – Key Features  1030-1090MHz • 125W Pulsed Output Power • 128µs-1mS, 10% Pulsing  Common Source • Class AB • 50VDD Bias Voltage  >70% Efficiency Across the Frequency Band  Extremely Compact Size  18.7 dB Typical Power Gain  0.1 dB Typical Excellent Gain Flatness  IFF, Mode-S, TCAS Avionics Secondary Radars  All gold metallization and eutectic die attach for highest reliability  50Ω in/out lumped element very small footprint plug & play pallets available CASE/PALLET OUTLINES 55-QQP (0.160”x0.