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1214GN-15E - Earless Driver GaN Transistor

Features

  • 1200-1400MHz.
  • 15W Output Power.
  • CW and Pulsed.
  • Common Source.
  • Class AB.
  • 50VDD Bias Voltage.
  • >60% Efficiency Across the Frequency Band.
  • Extremely Compact Size.
  • 17.8 dB Typical Power Gain.
  • 0.3 dB Typical Excellent Gain Flatness.
  • L-Band Radars, Communication, Industrial, General Purpose.
  • All gold metallization and eutectic die attach for highest reliability.
  • 50Ω in/out lumped element very small footprint plug & play p.

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Full PDF Text Transcription

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1214GN-15E 15 Watts • 50 Volts • 4.5mS, 35% 1200–1400MHz E Class Earless Driver GaN Transistor – Key Features  1200-1400MHz • 15W Output Power • CW and Pulsed  Common Source • Class AB • 50VDD Bias Voltage  >60% Efficiency Across the Frequency Band  Extremely Compact Size  17.8 dB Typical Power Gain  0.3 dB Typical Excellent Gain Flatness  L-Band Radars, Communication, Industrial, General Purpose  All gold metallization and eutectic die attach for highest reliability  50Ω in/out lumped element very small footprint plug & play pallets available CASE/PALLET OUTLINES 55-QQP (0.160”x0.
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