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1214GN-50EL - GaN Transistor

This page provides the datasheet information for the 1214GN-50EL, a member of the 1214GN-50E GaN Transistor family.

Features

  • 1200-1400MHz, 50W Output Power at 300µS, 10% pulsing.
  • 50V Bias Voltage, Common Source, Class AB.
  • >60% Typical Efficiency Across the Frequency Band.
  • Extremely Compact Size.
  • Over 16dB typical Power Gain.
  • Excellent Gain Flatness.
  • Radar, L-Band Avionics, Communications, and Industrial.

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Datasheet preview – 1214GN-50EL

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Full PDF Text Transcription

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1214GN-50E/EL/EP 50 Watts • 50 Volts • 300us, 10% 1200-1400 MHz E Series Earless/Eared GaN Transistor – Key Features  1200-1400MHz, 50W Output Power at 300µS, 10% pulsing  50V Bias Voltage, Common Source, Class AB  >60% Typical Efficiency Across the Frequency Band  Extremely Compact Size  Over 16dB typical Power Gain  Excellent Gain Flatness  Radar, L-Band Avionics, Communications, and Industrial applications  All gold metallization and eutectic die attach for highest reliability  50Ω in/out lumped element very small footprint plug & play pallets available ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 100 W Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) 150 V -8 to +0 V Maximum Temperatures Storage Temperatu
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