1N5195 Overview
AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current:.
| Part number | 1N5195 |
|---|---|
| Datasheet | 1N5195 / 1N5194 Datasheet PDF (Download) |
| File Size | 37.38 KB |
| Manufacturer | Microsemi |
| Description | SWITCHING DIODE |
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AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current:.
| Manufacturer | Part Number | Description |
|---|---|---|
Compensated Deuices Incorporated |
1N5195 | GENERAL PURPOSE SILICON DIODES |
Microsemi |
1N5195UR | LL-35 High Voltage / Current Low Leakage Glass Diodes |
Compensated Deuices Incorporated |
1N5195UR | GENERAL PURPOSE SILICON DIODES |