1N5712UR-1 Datasheet | Microsemi

DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AA glass package. Also included in this datasheet are Microsemi’s CDLL numbered variants of this series (military qualification grades not are not available for the CDLL prefix part numbers). Important: For the latest information, visit our website http://.microsemi.. FEATURES - Surface mount equivalent of JEDEC registered 1N5711, 1N5712, 1N6857, and 1N6858 numbers. - Hermetically sealed glass construction. - Metallurgically bonded. - Double plug construction. - JAN, JANTX, JANTXV and mercial qualifications also available per MIL-PRF-19500/444 on “1N” numbers only. (See Part Nomenclature for all available options). - Ro HS pliant versions available (mercial grade only). APPLICATIONS / BENEFITS - Low reverse leakage characteristics. - Small size for high density mounting using the surface mount method (see package illustration). - ESD sensitive to Class 1. Qualified Levels: JAN, JANTX, and JANTXV DO-213AA (MELF) Package Also available in: UB package (3-pin surface mount) 1N5711UB, 1N5712UB (B, CC, CA) DO-35 package (axial-leaded) 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 MAXIMUM RATINGS @ 25 ºC unless otherwise stated Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance, Junction-to-End Cap Average Rectified Output Current: 5711 & 6263 types (1) 2810, 5712 & 6858 types (2) 6857 types (3) Solder Temperature @ 10 s Symbol TJ and TSTG R ӨJEC Value -65 to +150 33 75 150 260 Unit ºC ºC/W m A o C NOTES: 1. At T EC and T SP = +140 °C, derate IO to 0 at +150 °C. 2. At T EC and T SP = +130 °C, derate IO to 0 at +150 °C. 3. At T EC and T SP = +110°C, derate IO to 0 at +150...