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1N646-1 - SILICON RECTIFIER

Key Features

  • 1N646-1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N646-1 FEATURES • 1N646-1 • SILICON RECTIFIER • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current: Operating Current: Derating Factor: Derating Factor: D.C. Reverse Voltage (VRWM): -65°C to +175°C -65°C to +175°C 5.0A 500mW 400mA, TA= +25°C 150mA, TA= +150°C 2mA/°C above +25°C 6mA/°C above +150°C 300V DESIGN DATA Case: Hermetically sealed glass package Lead Material: Copper clad steel Lead Finish: Tin/Lead Marking: Blue body coat, Black digits. Polarity: Cathode end is banded. DC ELECTRICAL CHARACTERISTICS VF Ambient (°C) IF mA Min Max Ambient V V (°C) 25 400 0.80 1.00 25 25 IR VR V (dc) 300 360 Min µA - Max µA 0.