1N646-1
1N646-1 is SILICON RECTIFIER manufactured by Microsemi.
FEATURES
- 1N646-1
- SILICON RECTIFIER
- METALLURGICALLY BONDED
- HERMETICALLY SEALED
- DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS AT 25 °C
Operating Temperature: Storage Temperature: Surge Current A, sine 8.3m S: Total Power Dissipation: Operating Current:
Operating Current: Derating Factor: Derating Factor:
D.C. Reverse Voltage (VRWM):
-65°C to +175°C -65°C to +175°C 5.0A 500m W 400m A, TA= +25°C
150m A, TA= +150°C 2m A/°C above +25°C 6m A/°C above +150°C
300V
DESIGN DATA
Case: Hermetically sealed glass package Lead Material: Copper clad steel Lead Finish: Tin/Lead Marking: Blue body coat, Black digits. Polarity: Cathode end is banded.
DC ELECTRICAL CHARACTERISTICS
Ambient (°C)
IF m A
Min Max Ambient V V (°C)
25 400 0.80 1.00 25
VR V (dc)
300 360
Min µA
- Max µA
0.050 50
AC ELECTRICAL CHARACTERISTICS AT 25°C
Symbol Min Max
Capacitance @ VR = 4V p F
- 20
.MICROSEMI.
IRELAND
- GORT ROAD, ENNIS, CO. CLARE
PHONE:
+353 65...
