2731-100M Datasheet PDF

Microsemi 2731-100M

The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis. This ceramic sealed transistor is specifically designed for S-band radar applications.

Part No.	2731-100M
Datasheet	2731-100M Download
Manufacturer	Microsemi
Description	Radar
Buy	Stock & Price

GENERAL DESCRIPTION

It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KS-1 Common Base

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation 575 Device Dissipation @ 25°C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3.0 Collector Current (Ic) 15.0 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A °C °C

ELECTRICAL CHARACTERISTICS

@ 25°C SYMBOL Pout Pg ηc Rl Pd VSWR-T CHARACTERISTICS Power Output Power Gain Collector Efficiency Return Loss Pulse Droop Load Mismatch Tolerance TEST CONDITIONS F=2700-3100 MHz Pulse Width = 200 µs Duty Factor = 10 % Power Input = 16W Vcc = +36V F = 2700, 2900, 3100 MHz MIN 100 8.0 40 -7 TYP 115 8.5 MAX 140 9.4 UNITS W dB % dB dB 0.6 2:1 FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces hFE θjc1 Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 30 mA...