Microsemi 2N1480
NPN SILICON MEDIUM POWER TRANSISTOR
| Part No. | 2N1480 |
|---|---|
| Datasheet | 2N1480 Download |
| Manufacturer |  Microsemi |
| Description | NPN SILICON MEDIUM POWER TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base-Current Total Power Dissipation @ TA = 250C Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PT TJ, Tstg Symbol RθJC 2N1479 2N1481 40 60 12 1.5 1.0 1.0 2N1480 2N1482 55 100 Unit Vdc Vdc Vdc Adc Adc W 0 -65 to +200 Max. 35 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W TO-5* *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Breakdown Voltage VEB = 1.5 Vdc, IC = 0.25 mAdc VEB = 1.5 Vdc, IC = 0.25 mAdc Collector-Base Cutoff Current VCB = 30 Vdc VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 12 Vdc 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO 40 55 60 100 5.0 5.0 10 Vdc V(BR)CEX Vdc I...