Microsemi 2N1487
NPN SILICON HIGH POWER TRANSISTOR
| Part No. | 2N1487 |
|---|---|
| Datasheet | 2N1487 Download |
| Manufacturer |  Microsemi |
| Description | NPN SILICON HIGH POWER TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VCEX VEBO IB IC PT TJ, Tstg Symbol RθJC 2N1487 2N1498 40 60 60 10 3.0 6.0 75 2N1488 2N1490 55 100 100 Unit Vdc Vdc Vdc Vdc Adc Adc W 0 @ TC = 250C (1) Operating & Storage Junction Temperature Range -65 to +200 Max. 2.33 C TO-33* (TO-204AA) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 0.429 W/0C for TC > 250C 0 Unit C/W *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Breakdown Voltage IC = 200 µAdc Collector-Emitter Breakdown Voltage IC = 0.5 mAdc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 30 Vdc Emitter-Base Cutoff Current VEB = 10 Vdc 2N1487, 2N1489 2N1488, 2N1490...