Datasheet Summary
TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level JAN JANTX
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT
Value
80 175 10 5.0 3.0 50 175 -65 to +200
Units
Vdc Vdc Vdc Adc W W
@ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA between +250C and +1750C 2) Derate linearly 666 mW/0C for TC between +1000C and +1750C
TO-61- 2N1724
TO-53- 2N1722
- See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics...
