Microsemi 2N2060L
UNITIZED DUAL NPN SILICON TRANSISTOR
| Part No. | 2N2060L |
|---|---|
| Datasheet | 2N2060L Download |
| Manufacturer |  Microsemi |
| Description | UNITIZED DUAL NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC 2N2060 60 100 7.0 500 Unit Vdc Vdc Vdc mAdc One Both Section Sections Total Power Dissipation @ TA = +250C (1) 540 600 PT @ TC = +250C (2) 1.5 2.12 Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg 0 0 0 1) Derate linearly 3.08 mW/ C for TA > 25 C for one section, 3.48 mW/ C for both sections 2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections mW W 0 C TO-78* *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = +250C unless otherwise noted) Characteristics Symbol V(BR)CER V(BR)CEO ICBO Min. 80 60 10 2.0 10 2.0 Max. Unit Vdc Vdc µAdc ηAdc µAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) RBE ≤ 10 Ω, IC = 10 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VEB =...