Microsemi 2N2221AL
NPN SILICON SWITCHING TRANSISTOR
| Part No. | 2N2221AL |
|---|---|
| Datasheet | 2N2221AL Download |
| Manufacturer |  Microsemi |
| Description | NPN SILICON SWITCHING TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C Operating & Storage Junction Temperature Range VCEO VCBO VEBO IC PT Top, Tstg 50 75 6.0 800 0.5 -65 to +200 Vdc Vdc Vdc mAdc W °C THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Thermal Resistance, Junction-to-Ambient 2N2221A, L 2N2222A, L RθJA 2N2221AUA 2N2222AUA 2N2221AUB, UBC 2N2222AUB, UBC Note: Consult 19500/255 for thermal performance curves. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/WELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 75Vdc VCB = 60Vdc Emitter-Base Cutoff Current VEB = 6.0Vdc VEB = 4.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc Symbol Min.
