Microsemi 2N2605UB
PNP SILICON LOW POWER TRANSISTOR
| Part No. | 2N2605UB |
|---|---|
| Datasheet | 2N2605UB Download |
| Manufacturer |  Microsemi |
| Description | PNP SILICON LOW POWER TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC PT TJ, Tstg 2N2604 2N2605 80 70 60 6.0 30 400 -65 to +200 Unit Vdc Vdc Vdc mAdc mW/°C °C THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Ambient Note: 1/ Consult 19500/354 for thermal curves Symbol UB RθJA Max. 437 275 Unit °C/mWELECTRICAL CHARACTERISTICS
(TA = +25°C, unl
