2N2608 Overview
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: Unit V mW °C (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Gate-Source Breakdown Voltage VDS = 0, IG = 1.0μA dc Symbol V(BR)GSS Min.
| Part number | 2N2608 |
|---|---|
| Datasheet | 2N2608-Microsemi.pdf |
| File Size | 23.94 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | P-CHANNEL J-FET |
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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: Unit V mW °C (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Gate-Source Breakdown Voltage VDS = 0, IG = 1.0μA dc Symbol V(BR)GSS Min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N2608 | GENERAL PURPOSE JFET | Motorola |
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2N2608 | P-Channel JFET | InterFET |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N2604UB | PNP SILICON LOW POWER TRANSISTOR |
| 2N2605UB | PNP SILICON LOW POWER TRANSISTOR |
| 2N2023 | Silicon Controlled Rectifiers |
| 2N2024 | Silicon Controlled Rectifiers |
| 2N2025 | Silicon Controlled Rectifiers |
| 2N2026 | Silicon Controlled Rectifiers |
| 2N2027 | Silicon Controlled Rectifiers |
| 2N2028 | Silicon Controlled Rectifiers |
| 2N2029 | Silicon Controlled Rectifiers |
| 2N2030 | Silicon Controlled Rectifiers |