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2N2880 Datasheet PDF

Microsemi 2N2880

This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.
Part No. 2N2880
Datasheet 2N2880 Download
Manufacturer
Microsemi
Description 5 Amp/ 80V/ Planar/ NPN Power Transistors JAN/JTX/JANTXV/JANS
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2N2880 datasheet page 1 preview

APPLICATIONS

:
● Fast Switching
● High Frequency Switching and Amplifying

FEATURES

:
● High Reliability
● Greater Gain Stability 2N2880 5 Amp, 80V, Planar, NPN Power Transistors JAN,JTX,JANTXV,JANS

DESCRIPTION

: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.

ABSOLUTE MAXIMUM RATINGS

SYMBOL CHARACTERISTIC VCBO* VCEO* VEBO* IC* IB* Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current TSTG* TJ* * Storage Temperature Operating Junction Temperature Lead Temperature 1/16" From Case for 10 Sec. Power Dissipation PT* TA = 25°C TC = 100°C θ JC Thermal Resistance Junction to Case * Indicates...
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