Microsemi 2N3250A
PNP SILICON SWITCHING TRANSISTOR
| Part No. | 2N3250A |
|---|---|
| Datasheet | 2N3250A Download |
| Manufacturer |  Microsemi |
| Description | PNP SILICON SWITCHING TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol (1)(2) RθJA Value 60 60 5.0 200 0.36 1.2 -65 to +175 Max. 417 Units Vdc Vdc Vdc mAdc W W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Ambient 1) Derate linearly 2.4 W/0C for TA > +250C 2) Derate linearly 8.0 W/0C for TC > +250C 0 TO-39* (TO-205AD) *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 40 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc V(BR)CEO ICEX ICBO IEBO IC...