Microsemi 2N3251
PNP BIPOLAR TRANSISTOR
| Part No. | 2N3251 |
|---|---|
| Datasheet | 2N3251 Download |
| Manufacturer |  Microsemi |
| Description | PNP BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
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● Meets MIL-S-19500/323 Collector-Base Voltage 60V Collector Current: 200 mA Fast Switching 370 nS 60 Volts 200 mAmps PNP BIPOLAR TRANSISTOR
MAXIMUM RATINGS
RATING Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation o @ T A = 25 C o Derate above 25 C Total Device Dissipation o @ T C = 25 C o Derate above 25 C Operating Temperature Range Storage Temperature Range Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL VCEO VCBO VEBO IC PD MAX. -60 -60 -5.0 -200 0.36 2.4 PD 1.2 8 -65 to +175 -65 to +175 417 146 Watts o mW/ C o C o o o UNIT Vdc Vdc Vdc mAdc Watts o mW/ C TJ TS RθJA RθJC C C/W C/W Mechanical Outline Datasheet# MSC0281A 5/19/97 2N3251A Electrical Parameters (TA @ 25° C unless otherwise specified) CHARACTERISTICS Off Characteristics Collector-Emitter Breakdown Voltage(1) (I C = -10 mAdc) Collector-Base Breakdown Voltage (I C = -10 µAdc) Emitter-Base Breakdown Voltage (I E = -10 µAdc) Collector Cutoff Current (V CE = -40 Vdc, V EB = -3.0 Vdc) ( at 150 C ) Base Cutoff Current (V CE = -40 Vdc, V EB = -3.0 Vdc) D.C.