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2N3420S - NPN MEDUIM POWER SILICON TRANSISTOR

Download the 2N3420S datasheet PDF. This datasheet also covers the 2N3814S variant, as both devices belong to the same npn meduim power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3814S-Microsemi.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Devices 2N3418 2N3814S 2N3419 2N3419S 2N3420 2N3420S 2N3421 2N3421S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current tP ≤ 1.0 ms, duty cycle ≤ 50% Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Temperature Range 1) Derate linearly 5.72 mW/0C for TA > 250C 2) Derate linearly 150 mW/0C for TC > 1000C Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3418, S 2N3419, S 2N3420, S 2N3421, S 60 80 85 125 8.0 3.0 5.0 1.