Microsemi 2N3439L
NPN LOW POWER SILICON TRANSISTOR
| Part No. | 2N3439L |
|---|---|
| Datasheet | 2N3439L Download |
| Manufacturer |  Microsemi |
| Description | NPN LOW POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3439 350 450 2N3440 250 300 Units Vdc Vdc Vdc Adc W W/0C 0 C @TA = 250C(1) @TC = 250C(2) Operating & Storage Temperature Range 1) 7.0 1.0 0.8 5.0 -55 to +200 TO- 5* 2N3439L, 2N3440L 2) Derate linearly 4.57 mW/0C for TA > +250C Derate linearly 28.5 mW/0C for TC > +250C TO-39* (TO205-AD) 2N3439, 2N3440 *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Cutoff Current VCE = 300 Vdc VCE = 200 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 2N3439 2N3440 2N3439 2N3440 V(BR)CEO ICEO 350 250 2.0 2.0 10 Vdc µAdc µAdc µAdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3439, L, 2N3440, L, JAN SERIESELECTRICAL CHARACTERISTICS
(con’t) Characteristics Symbol ICEX Min.
