Microsemi 2N3467L
PNP SILICON SWITCHING TRANSISTOR
| Part No. | 2N3467L |
|---|---|
| Datasheet | 2N3467L Download |
| Manufacturer |  Microsemi |
| Description | PNP SILICON SWITCHING TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3467 2N3467L 40 40 2N3468 2N3468L 50 50 Unit Vdc Vdc Vdc Adc W W 0 C @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C 5.0 1.0 1.0 5.0 -55 to +175 TO-39* (TO-205AD) 2N3467, 2N3468 TO-5* 2N3467L, 2N3468L *See appendix A for package outlineELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Emitter-Base Breakdown Current IE = 10 µAdc Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 30 Vdc Collector-Emitter Cutoff Current VEB = 3.0 Vdc, VCE = 30 2N3467, L 2N3468, L V(BR)CBO V(BR)EBO 2N3467, L 2N3468, L V(BR)CEO ICBO ICEX 40 50 5.0 40 50 100 100 Vdc Vdc Vdc ηAdc nAdc 6 Lake Street, L...