Microsemi 2N3485A
PNP SILICON SMALL SIGNAL TRANSISTOR
| Part No. | 2N3485A |
|---|---|
| Datasheet | 2N3485A Download |
| Manufacturer |  Microsemi |
| Description | PNP SILICON SMALL SIGNAL TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Power Dissipation Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJA RθJC 2N3485A 2N3486A 60 60 5.0 600 0.4 2.0 -55 to +200 Max. 0.439 87 Unit Vdc Vdc Vdc mAdc W W 0 C Unit mC/W 0 @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance Junction-to-Ambient Junction-to-Case 1) Derate linearly 2.28 mW/0C above TA = +250C 2) Derate linearly 11.43 mW/0C above TC = +250C 0 TO-46* (TO-206AB) C/W *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 60 10 10 50 10 Max. Unit Vdc ηAdc µAdc ηAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VEB = 3.5 Vdc VEB = 5.0 Vdc IEBO 6 Lake Street, Lawren...