Microsemi 2N3498
NPN SILICON SWITCHING TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Symbol 2N3498* 2N3501* 2N3499* 2N3501* VCEO 100 150 Collector-Base Voltage VCBO 100 150 Emitter-Base Voltage VEBO 6.0 6.0 Collector Current Total Power Dissipation @ TA = +25°C @ TC = +25°C Operating & Storage Junction Temperature Range IC PT TJ, Tstg 500 300 1.0 5.0 -65 to +200 Unit Vdc Vdc Vdc mAdc W W °C THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RθJC RθJA 30 175 * Electrical characteristics for “L” suffix devices are identical