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2N3506AL - NPN MEDIUM POWER SILICON TRANSISTOR

Download the 2N3506AL datasheet PDF. This datasheet also covers the 2N3506L variant, as both devices belong to the same npn medium power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3506L-Microsemi.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C (1) @ TC = 25°C (2) Operating & Storage Temperature Range Note: 1) Derate linearly 5.71 mW/°C for TA > +25°C 2) Derate linearly 55.5 mW/°C for TC > +25°C Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3506 2N3507 40 50 60 80 5.0 3.0 1.0 5.