Microsemi 2N3584
This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.| Part No. | 2N3584 |
|---|---|
| Datasheet | 2N3584 Download |
| Manufacturer |  Microsemi |
| Description | 5 Amp/ 375V/ High Voltage NPN Silicon Power Transistors |
| Buy | Stock & Price |
APPLICATIONS
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● Off-Line Inverters Switching Regulators Motor Controls
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● Deflection Circuits DC-DC Converters High Voltage Amplifiers
FEATURES
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● High Voltage: 250 to 500V Fast Switching: tf < 3µ sec. High Power: 35 Watts
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● High Current: 2 Amps Low VCE (SAT) 5 Amp, 375V, High Voltage NPN Silicon Power Transistors
DESCRIPTION
: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-66ABSOLUTE MAXIMUM RATINGS
: SYMBOL VCBO* VCEO* VCER* VEBO* IC* IC* IB* TSTG* TJ* * PT* θ * CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage RBE = 50Ω Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Lead Temperature 1/16" from Case for 10 Sec.
