Microsemi 2N3741
This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.| Part No. | 2N3741 |
|---|---|
| Datasheet | 2N3741 Download |
| Manufacturer |  Microsemi |
| Description | Medium Power PNP Transistors |
| Buy | Stock & Price |
APPLICATIONS
:●
●
● 2N3741 Drivers Switches Medium-Power Amplifiers
FEATURES
:●
●
●
● Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Complementary to NPN 2N3767 (2N3741) Medium Power PNP Transistors
DESCRIPTION
: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-66ABSOLUTE MAXIMUM RATINGS
: SYMBOL VCEO* VEB* VCB* IC* IC* IB* TSTG* TJ* PD* θ * CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Total Device Dissipation...
