Microsemi 2N3811L
PNP SILICON DUAL TRANSISTOR
| Part No. | 2N3811L |
|---|---|
| Datasheet | 2N3811L Download |
| Manufacturer |  Microsemi |
| Description | PNP SILICON DUAL TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value 60 60 5.0 50 One Both Section 1 Sections2 0.5 0.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 3.43 mW/0C for TA > +250C PT TJ, Tstg 0 W C TO-78* *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10 µAdc Collector-Emitter Breakdown Current IC = 10 mAdc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Base Cutoff Current VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc V(BR)CBO V(BR)CEO V(BR)EBO ICBO 60 60 5.0 10 10 Vdc Vdc Vdc ηAdc ηAdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3810, 2N3810L, 2N3811, 2N3811L JAN SERIESELECTRICAL CHARACTERISTICS
(con’t) Characteristics Symbol Min.