Microsemi 2N3814S
NPN MEDUIM POWER SILICON TRANSISTOR
| Part No. | 2N3814S |
|---|---|
| Datasheet | 2N3814S Download |
| Manufacturer |  Microsemi |
| Description | NPN MEDUIM POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current tP ≤ 1.0 ms, duty cycle ≤ 50% Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Temperature Range 1) Derate linearly 5.72 mW/0C for TA > 250C 2) Derate linearly 150 mW/0C for TC > 1000C Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3418, S 2N3419, S 2N3420, S 2N3421, S 60 80 85 125 8.0 3.0 5.0 1.0 15 -65 to +200ELECTRICAL CHARACTERISTICS
Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 50 mAdc, IB = 0 Collector-Emitter Cutoff Current VBE = -0.5 Vdc, VCE = 80 Vdc VBE = -0.5 Vdc, VCE = 120 Vdc Collector-Emitter Cutoff Current VCE = 45 Vdc, IB = 0 VCE = 60 Vdc, IB = 0 Emitter-Base Cutoff Current VEB = 6.0 Vdc, IC = 0 VEB = 8.0 Vdc, IC