2N3814S - NPN MEDUIM POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N3814S
Manufacturer	Microsemi (now Microchip Technology)
File Size	56.23 KB
Description	NPN MEDUIM POWER SILICON TRANSISTOR
Datasheet	2N3814S Datasheet

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TECHNICAL DATA NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Devices 2N3418 2N3814S 2N3419 2N3419S 2N3420 2N3420S 2N3421 2N3421S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current tP ≤ 1.0 ms, duty cycle ≤ 50% Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Temperature Range 1) Derate linearly 5.72 mW/0C for TA > 250C 2) Derate linearly 150 mW/0C for TC > 1000C Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3418, S 2N3419, S 2N3420, S 2N3421, S 60 80 85 125 8.0 3.0 5.0 1.