Microsemi 2N3822
N-CHANNEL J-FET
| Part No. | 2N3822 |
|---|---|
| Datasheet | 2N3822 Download |
| Manufacturer |  Microsemi |
| Description | N-CHANNEL J-FET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation TA = +250C (1) Operating Junction & Storage Temperature Range Symbol VGSR VDS VDG IGF PT Tj, Tstg 2N3821 2N3822 50 50 50 2N3823 30 30 30 Unit V V V mA mW 0 C 10 300 -55 to +200 TO-72* (TO-206AF) *See appendix A for package outline (1) Derate linearly 1.7 mW/0C for TA +25 0 C.ELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 µAdc Gate Reverse Current VDS = 0, VGS = 30 Vdc VDS = 0, VGS = 20 Vdc Zero-Gate-Voltage Drain Current VGS = 0, VDS = 15 Vdc 2N3821, 2N3822 2N3823 2N3821, 2N3822 2N3823 2N3821 2N3822 2N3823 2N3821 2N3822 2N3823 2N3821 2N3822 2N3823 V(BR)GSSR Min. 50 30 Max. Units Vdc ηA IGSSR 0.1 0.5 0.5 2.0 4.0 0.5 1.0 1.0 2.5 10 20 2.0 4.0 7.5 4.0 6.0 8.0 IDSS mA Gate-Source Voltage VDS = 15 Vdc, ID = 50 µAdc VDS = 15 Vdc, ID = 200 µAdc VDS = 15 Vdc, ID...