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2N3866A Datasheet PDF

Microsemi 2N3866A

RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS

Part No. 2N3866A
Datasheet 2N3866A Download
Manufacturer
Microsemi
Description RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS
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2N3866A datasheet page 1 preview

FEATURES

● Silicon NPN, To-39 packaged VHF/UHF Transistor
● Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45%
● 800 MHz Current-Gain Bandwidth Product 1. Emitter 2. Base 3. Collector TO-39

DESCRIPTION

: Silicon NPN transistor, designed for VHF and UHF equipment.

APPLICATIONS

include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation Derate above 25ºC Value 30 55 3.5 400 5.0 28.6 Unit Vdc Vdc Vdc mA Watts mW/ ºC Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at or contact our factory direct.

ELECTRICAL SPECIFICATIONS

(Tcase = 25°C) STATIC (off) Symbol Test Conditions BVCER BVCEO BVCBO BVEBO ICE...
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