Microsemi 2N3868S
Silicon PNP Power Transistors
| Part No. | 2N3868S |
|---|---|
| Datasheet | 2N3868S Download |
| Manufacturer |  Microsemi |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range Symbol 2N3867 2N3868 VCBO VCEO VEBO IC PT TJ, Tstg 40 60 40 60 4.0 3.0 1.0 -65 to +200 THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Thermal Resistance, Junction-to-Ambient RθJA 175 Note: * Electrical characteristics for “S” suffix devices are identical to the “non S” corresponding devices. 1/ Derate linearly 5.71mW/°C for TA > +25°C 2/ Derate linearly 57.1mW/°C for TC > +25°C Unit Vdc Vdc Vdc mAdc W/°C °C Unit °C/mWELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current IC = 10μAdc 2N3867, S 2N3868, S Collector-Base Cutoff Current VCB = 40Vdc VCB = 60Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc Collector-Emitter Cu...
