Datasheet Summary
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/371
Devices
2N5157
Qualified Level
JAN JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1) @ TC = +750C (2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 29 mW/0C for TA > +250C 2) Derate linearly 0.8 W/0C for TC > +750C
Symbol VCEO VEBO VCBO IB IC
Tj, Tstg
Symbol RθJC
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 325...
