2N3902 - NPN HIGH POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N3902
Manufacturer	Microsemi (now Microchip Technology)
File Size	54.92 KB
Description	NPN HIGH POWER SILICON TRANSISTOR
Datasheet	2N3902 Datasheet

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices 2N3902 2N5157 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +750C (2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 29 mW/0C for TA > +250C 2) Derate linearly 0.8 W/0C for TC > +750C Symbol VCEO VEBO VCBO IB IC PT Tj, Tstg Symbol RθJC ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 325 Vdc 2N3902 VCE = 400 Vdc Collector-Emitter Cutoff Current 2N5157 VBE = 1.