2N3999 Datasheet | Microsemi

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //.microsemi. TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 DEVICES 2N3996 2N3997 2N3998 LEVELS JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +25°C (2) @ TC = +100°C (3) VCEO VCBO VEBO IB IC Operating & Storage Junction Temperature Range TJ, Tstg Thermal Resistance, Junction-to-Case RθJC Note: (1) This value applies for Tp ≤ 1.0ms, duty cycle ≤ 50% (2) Derate linearly 11.4 m W/°C for TA > +25°C (3) Derate linearly 300 m W/°C for TC > +100°C Value 80 100 8.0 0.5 10 (1) 2.0 30 -65 to +200 3.33 Unit...