Microsemi 2N3999
NPN POWER SWITCHING SILICON TRANSISTOR
| Part No. | 2N3999 |
|---|---|
| Datasheet | 2N3999 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SWITCHING SILICON TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +25°C (2) @ TC = +100°C (3) VCEO VCBO VEBO IB IC PT Operating & Storage Junction Temperature Range TJ, Tstg Thermal Resistance, Junction-to-Case RθJC Note: (1) This value applies for Tp ≤ 1.0ms, duty cycle ≤ 50% (2) Derate linearly 11.4 mW/°C for TA > +25°C (3) Derate linearly 300 mW/°C for TC > +100°C Value 80 100 8.0 0.5 10 (1) 2.0 30 -65 to +200 3.33 Unit V
