Microsemi 2N4427
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | 2N4427 |
|---|---|
| Datasheet | 2N4427 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
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● Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz 1. Emitter 2. Base 3. Collector TO-39
DESCRIPTION
: Silicon NPN transistor, designed for VHF and UHF equipment.APPLICATIONS
include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 1.0 5.71 Watts mW/ ºC MSC1301.PDF 10-25-99 2N4427ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol BVCER BVCEO ICEO ICEX IEBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector Cutof...
