Microsemi 2N5002
NPN POWER SILICON TRANSISTOR
| Part No. | 2N5002 |
|---|---|
| Datasheet | 2N5002 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RθJC 0 Value 80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88 Units Vdc Vdc Vdc Adc W 0 Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 mW/ C for TA > 25 C 2) Derate linearly 331 mW/0C for TC > 250C 3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% 0 Unit 0 C/W 0 TO-59* RθJA C/W *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICEO ICES Min. 80 50 1.0 1.0 1.0 1.0 Max. Unit Vdc µAdc µAdc mAdc mAdc mAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, Collector-Emitter Cutoff Current VCE = 40 Vdc, IB = 0 Collector-Emitter Cutoff...