Microsemi 2N5151L
PNP POWER SILICON TRANSISTOR
2N5151L Specifications
- Package : TO-5
- Mount Type : Through Hole
- Polarity : PNP
- Collector Base Voltage : 100V
- Collector Emitter Voltage : 80V
- Emitter Base Voltage : 5.5V
- Power Dissipation : 1W
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | 2N5151L |
|---|---|
| Datasheet | 2N5151L Download |
| Manufacturer |  Microsemi |
| Description | PNP POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC(3, 4) PT Tj, Tstg Symbol RθJC All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15 Units Vdc Vdc Vdc Adc W W °C Unit C/W TO- 5* 2N5151L, 2N5153L @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 66.7 mW/0C for TC > +250C 3) Derate linearly 6.67 mW/0C for TA > +250C 4) Derate linearly 80 mW/0C for TC > +250C 0 2N5151, 2N5153 TO-39* (TO-205AD) *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO IEBO Min. 80 1.0 1.0 1.0 1.0 50 Max. Unit Vdc µAdc mAdc µAdc mAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0 Vdc, Ic = 0 VEB =...