Microsemi 2N5154
NPN POWER SILICON TRANSISTOR
MAXIMUM RATINGS
Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) VCEO VCBO VEBO IC(3, 4) PT Operating & Storage Temperature Range Tj, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 66.7 mW/0C for TC > +250C 3) Derate linearly 80 mW/0C for TC > +250C 4) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% RθJC All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15 Units Vdc Vdc Vdc Adc W W °C Unit 0C/WELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current V(BR)CE