Microsemi 2N5588
NPN Transistor
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●˜ó● text/html About keyword search: News Contact Employment Site part number search: Home 2N5588 (#23391) RFQ/Sample NPN Transistor Division Lawrence Mil -Spec (none) Shipping (none) Datasheet Qual Data (none) Contact Microsemi Package TO-114(STD) Maximum Electrical Rating Power Dissipation Collector Current Breakdown Voltage Collector -to-Base Voltage Collector to Emitter Open Voltage Emitter to Base Open Symbol Power IC BV(CBO) VCEO BVEBO Max Unit 350 W 80 A 160 V 160 V 6V Electrical Rating Symbol Min Typ Max Unit Collector Emitter Saturation Voltage (IB=0.8 mA, I C=80 mA, TA=25 ºC,300µ s pulse) VCE(sat) 2V DC Current Gain (IC=80 mA, TA=25 ºC,300µ s pulse) HFE 10 30 Privacy Policy | Site Map PPG Webex Port|aPl PG Extranet Login Avionics| Backlight Inverte|rsL-Band Rada|rLED Driver| LDMOS & VDMOS| MOSFETs, IGBTs, & Diode| sPin Diodes| Power Modules RF Power & Bipolar Transist|oSrs-Band Rada|rSCR| Thyristors| Varacter Diode| WLA
●˜ó● text/html About keyword search: News Contact Employment Site part number search: Home 2N5588 (#23391) RFQ/Sample NPN Transistor Division Lawrence Mil -Spec (none) Shipping (none) Datasheet Qual Data (none) Contact Microsemi Package TO-114(STD) Maximum Electrical Rating Power Dissipation Collector Current Breakdown Voltage Collector -to-Base Voltage Collector to Emitter Open Voltage Emitter to Base Open Symbol Power IC BV(CBO) VCEO BVEBO Max Unit 350 W 80 A 160 V 160 V 6V Electrical Rating Symbol Min Typ Max Unit Collector Emitter Saturation Voltage (IB=0.8 mA, I C=80 mA, TA=25 ºC,300µ s pulse) VCE(sat) 2V DC Current Gain (IC=80 mA, TA=25 ºC,300µ s pulse) HFE 10 30 Privacy Policy | Site Map PPG Webex Port|aPl PG Extranet Login Avionics| Backlight Inverte|rsL-Band Rada|rLED Driver| LDMOS & VDMOS| MOSFETs, IGBTs, & Diode| sPin Diodes| Power Modules RF Power & Bipolar Transist|oSrs-Band Rada|rSCR| Thyristors| Varacter Diode| WLA