Microsemi 2N5667S
NPN POWER SILICON SWITCHING TRANSISTOR
| Part No. | 2N5667S |
|---|---|
| Datasheet | 2N5667S Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON SWITCHING TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current 2N5664 2N5665 Symbol 2N5666, S 2N5667, S Unit VCEO VCBO VEBO IB IC 200 250 6.0 1.0 5.0 2N5664 2N5666, S 2N5665 2N5667, S 2.5 (1) 1.2 (2) (3) 30 15 (4) -65 to +200 300 400 Vdc Vdc Vdc Adc Adc TO-66* (TO-213AA) 2N5664, 2N5665 @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 1) Derate linearly 14.3 mW/0C for TA > +250C 2) Derate linearly 6.9 mW/0C for TA > +250C 3) Derate linearly 300 mW/0C for TC >+1000C 4) Derate linearly 150 mW/0C for TC > +1000C Total Power Dissipation PT TJ, Tstg W W 0 C TO-5* 2N5666, 2N5667 TO-39* (TO-205AD) 2N5666S, 2N5667S *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Cutoff Current VCE = 200 Vdc VCE...