Microsemi 2N5685
NPN POWER SILICON TRANSISTOR
2N5685 Specifications
- Package : TO-3
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 50A
- Collector Base Voltage : 60V
- Max Power Dissipation : 300W
- Max Operating Temp : 200°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | 2N5685 |
|---|---|
| Datasheet | 2N5685 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +25°C (1) @ TC = +100°C (1) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N5685 2N5686 60 80 60 80 5.0 5.0 15 15 50 50 300 300 171 171 -55 to +200 Unit Vdc Vdc Vdc Adc Adc W W °C THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case Symbol RθJC Max. .0584 Note: 1. Derate linearly 1.715 W/°C between TC = 25°C and TC = 200°CELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Unit °C/W Parameters / T
