Microsemi 2N5794
NPN SILICON DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C Symbol VCEO VCBO VEBO IC PT Value 40 75 6.0 600 One Total Section 1 Device 2 0.5 0.6 Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 Unit Vdc Vdc Vdc mAdc W °C NOTES: 1. Derate linearly 2.86 mW/°C for TA > +25°C 2. Derate linearly 3.43 mW/°C for TA > +25°CELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Parameters /