Microsemi 2N6193
PNP MEDIUM POWER SILICON TRANSISTOR
| Part No. | 2N6193 |
|---|---|
| Datasheet | 2N6193 Download |
| Manufacturer |  Microsemi |
| Description | PNP MEDIUM POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Symbol VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 2N6193 100 100 6.0 5.0 1.0 1.0 10 -65 to +200 Max. 17.5 Units Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.71mW/0C for TA > +250C 2) Derate linearly 57.1mW/0C for TC > +250C 0 TO-39* (TO-205AD) *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol VCEO(sus) ICEO IEBO ICEX ICBO Min. 100 100 100 10 10 Max. Unit Vdc µAdc µAdc µAdc µAdc OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage IC = 50 mAdc Collector-Emitter Cutoff Current VCE = 100 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 90 Vdc, VBE = 1.5 Vdc Collector-Base C...