2N6232
SILICON NPN TRANSISTOR
TECHNICAL DATA
Devices
- FAST SWITCHING
- LOW SATURATION VOLTAGE
10 AMP 100 V
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Peak (1) Base Current
- Continuous Total Power Dissipation @ TC = 250C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case
(1) Pulse Test: Pulse Width = Duty Cycle < %
Symbol
VCEO VCBO VEBO
IC IB PD
TJ, Tstg
Value
100 140 7.0 10
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc W W/0C 0C
Symbol RθJC
Max. 6.67
Unit 0C/W
TO-5
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (2)
IC = 100 m Adc, IB = 0 Collector-Emitter Cutoff Current
VCEO(sus)
VCE = 140 Vdc, Rbe =...
