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2N6232 - SILICON NPN TRANSISTOR

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SILICON NPN TRANSISTOR TECHNICAL DATA Devices 2N6232 • FAST SWITCHING • LOW SATURATION VOLTAGE 10 AMP 100 V MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak (1) Base Current – Continuous Total Power Dissipation @ TC = 250C Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case (1) Pulse Test: Pulse Width = Duty Cycle < % Symbol VCEO VCBO VEBO IC IB PD TJ, Tstg Value 100 140 7.0 10 1.25 -65 to +200 Units Vdc Vdc Vdc Adc Adc W W/0C 0C Symbol RθJC Max. 6.