Microsemi 2N6232
SILICON NPN TRANSISTOR
| Part No. | 2N6232 |
|---|---|
| Datasheet | 2N6232 Download |
| Manufacturer |  Microsemi |
| Description | SILICON NPN TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak (1) Base Current – Continuous Total Power Dissipation @ TC = 250C Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case (1) Pulse Test: Pulse Width = Duty Cycle < % Symbol VCEO VCBO VEBO IC IB PD TJ, Tstg Value 100 140 7.0 10 1.25 -65 to +200 Units Vdc Vdc Vdc Adc Adc W W/0C 0C Symbol RθJC Max. 6.67 Unit 0C/W TO-5ELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (2) IC = 100 mAdc, IB = 0 Collector-Emitter Cutoff Current VCEO(sus) VCE = 140 Vdc, Rbe = 0 ICES Collector Cutoff Current VCE = 100 Vdc, RBE = 0 Ω, TC = 1500C ICES Emitter-Base Cutoff Current VEB = 7.0 Vdc, IC = 0 IEBO Min. Max. Unit 100 Vdc 0.2 uAdc 0.1 mAdc 10 uAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-08...