| Part number | 2N6249 |
|---|---|
| Datasheet | 2N6249_Microsemi.pdf |
| File Size | 106.06 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | NPN POWER SILICON TRANSISTOR |
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Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; Unit OFF CHARACTERISTICS (con’t) Collector-Emitter Cutoff Current VCE = 225 Vdc; VBE = -1.5 Vdc VCE = 300 Vdc;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6249 | NPN SILICON TRANSISTOR | Central Semiconductor Corp |
 |
2N6249 | Silicon Power Transistor | SavantIC |
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2N6249 | Bipolar NPN Device | Seme LAB |
 |
2N6249 | HIGH VOLTAGE SILICON POWER TRANSISTORS | Comset Semiconductors |
 |
2N6249 | NPN Darlington Power Silicon Transistor | VPT |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N6211 | PNP HIGH POWER SILICON TRANSISTOR |
| 2N6212 | PNP HIGH POWER SILICON TRANSISTOR |
| 2N6213 | PNP HIGH POWER SILICON TRANSISTOR |
| 2N6232 | SILICON NPN TRANSISTOR |
| 2N6250 | NPN POWER SILICON TRANSISTOR |
| 2N6251 | NPN POWER SILICON TRANSISTOR |
| 2N6274 | NPN POWER SILICON TRANSISTOR |
| 2N6277 | NPN POWER SILICON TRANSISTOR |
| 2N6279 | NPN Transistor |
| 2N6298 | PNP DARLINGTON POWER SILICON TRANSISTOR |
