Microsemi 2N6251
NPN POWER SILICON TRANSISTOR
| Part No. | 2N6251 |
|---|---|
| Datasheet | 2N6251 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Symbol 2N6249 2N6250 2N6251 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temp Range THERMAL CHARACTERISTICS VCEO VCBO VEBO IC IB PT Top, Tstg 200 275 300 375 6.0 10 5.0 5.5 175 -55 to +200 350 450 Characteristics Symbol Max. Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly at 34.2 mW/0C for TA > +250C 2) Derate linearly at 1.0 W/0C for TC > +250C 1.0ELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 42 mH; F = 30-60 Hz (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 V(BR)CEO 2N6251 Collector-Emitter Breakdown Vol