Microsemi 2N6300
PNP DARLINGTON POWER SILICON TRANSISTOR
| Part No. | 2N6300 |
|---|---|
| Datasheet | 2N6300 Download |
| Manufacturer |  Microsemi |
| Description | PNP DARLINGTON POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C (1) @ TC = 1000C VCEO VCBO VEBO IB IC PT Operating & Storage Junction Temperature Range TJ, Tstg 1) Derate linearly 0.428 W/0C above TC > 00C 2N6300 2N6301 60 80 60 80 5.0 120 8.0 75 32 -55 to +200ELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc 2N6300 2N6301 V(BR)CEO Collector-Emitter Cutoff Current VCE = 30 Vdc 2N6300 ICEO VCE = 40 Vdc Collector-Emitter Cutoff Current 2N6301 VCE = 60 Vdc, VBE = -1.5 Vdc 2N6300 ICEX VCE = 80 Vdc, VBE = -1.5 Vdc Emitter-Base Cutoff Current 2N6301 VEB = 5.0 Vdc IEBO Units Vdc Vdc Vdc mAdc Adc W W 0C Min. 60 80 TO-66* (TO-213AA) *See appendix A for package outline Max. Unit Vdc 0.5 mAdc 0.5 0.5 mAdc 0.5 2.0 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (...