Microsemi 2N6327
NPN Transistor
| Part No. | 2N6327 |
|---|---|
| Datasheet | 2N6327 Download |
| Manufacturer |  Microsemi |
| Description | NPN Transistor |
| Buy | Stock & Price |
ISCFdÈ@éc"@éc" text/html About keyword search: News Contact Employment Site part number search: Home 2N6327 (#23551) RFQ/Sample NPN Transistor Division Lawrence Mil -Spec (none) Shipping (none) Datasheet Qual Data (none) Contact Microsemi Package Maximum Electrical Rating Power Dissipation Collector Current Breakdown Voltage Collector -to-Base Voltage Collector to Emitter Open Voltage Emitter to Base Open Symbol Power IC BV(CBO) VCEO BVEBO Max Unit 200 W 30 A 80 V 80 V 5V Electrical Rating Symbol Min Typ Max Unit Collector Emitter Saturation Voltage (IB=1.5 mA, I C=30 mA, TA=25 ºC,300µ s pulse) VCE(sat) 1.5 V DC Current Gain (IC=30 mA, TA=25 ºC,300µ s pulse) HFE 6 30 Privacy Policy | Site Map PPG Webex Port|aPl PG Extranet Login Avionics| Backlight Inverte|rsL-Band Rada|rLED Driver| LDMOS & VDMOS| MOSFETs, IGBTs, & Diode| sPin Diodes| Power Modules RF Power & Bipolar Transist|oSrs-Band Rada|rSCR| Thyristors| Varacter Diode| WLAN Power Amplifie|rZen