Microsemi 2N6384
NPN DARLINGTON POWER SILICON TRANSISTOR
| Part No. | 2N6384 |
|---|---|
| Datasheet | 2N6384 Download |
| Manufacturer |  Microsemi |
| Description | NPN DARLINGTON POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6383 2N6384 2N6385 Unit VCEO VCBO VEBO IB IC PT Top, Tstg 40 40 60 60 5.0 0.25 10 6.0 100 -55 to +175 Max. 1.75 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 34.2 mW/0C above TA > +250C 2) Derate linearly 571 mW/0C above TC > +250C TO-3* (TO-204AA) 0 *See Appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = +250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 40 60 80 40 60 80 1.0 1.0 1.0 Vdc V(BR)CEO Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VC...