Microsemi 2N696S
NPN Transistor
| Part No. | 2N696S |
|---|---|
| Datasheet | 2N696S Download |
| Manufacturer |  Microsemi |
| Description | NPN Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range Symbol VCBO VEBO PT TJ, Tstg Symbol RθJC Value 60 5.0 0.6 2.0 -65 to +200 Max. 0.075 Units Vdc Vdc W W 0 C Unit C/mW THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 4.0 mW/0C for TA > 250C 2) Derate linearly 13.3 mW/0C for TC > 250C 0 TO-5* *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CER ICBO IEBO Min. Max. Unit Vdc 10 0.1 10 µAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage RBE = 10 Ω, IC = 100 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 30 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 40 ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc Ba...
